SCOPUS 정보 검색 플랫폼

Volumn 33, Issue 3, 2010, Pages 157-164

Methodology of ALD HfO2 high-κ gate dielectric optimization by cyclic depositions and anneals

(9) Jagannathan, H a Clark, R D b Consiglio, S b Jamison, P a Linder, B P c Hopstaken, M c Leusink, G J b Paruchuri, V K a Narayanan, V c

a IBM RESEARCH (United States)

b TEL TECHNOLOGY CENTER (United States)

c IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON FILMS; DIELECTRIC MATERIALS; GATE DIELECTRICS; HAFNIUM OXIDES; HALL MOBILITY; HIGH-K DIELECTRIC; HOLE MOBILITY; OXIDE FILMS; TEMPERATURE DISTRIBUTION; THRESHOLD VOLTAGE;

ANNEAL TEMPERATURES; ANNEALED SAMPLES; CYCLIC DEPOSITION; ELECTRICAL CHARACTERIZATION; EQUIVALENT OXIDE THICKNESS; MAGNITUDE REDUCTION; TEMPERATURE DEPENDENCE; TRAP ASSISTED TUNNELING;

ATOMIC LAYER DEPOSITION;

EID: 79952665807 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.3481602 Document Type: Conference Paper

Times cited : (11)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.