Process characteristics and physical properties of MO-ALD ZrO2 thin films deposited in a 300 mm deposition system

ECS Transactions

Volumn 13, Issue 1, 2008, Pages 89-99

  Consiglio, S ^a   Clark, R D ^a   Wajda, C S ^a   Igeta, M ^a   Leusink, G J ^a   Sugawara, T ^b   Nakabayashi, H ^b  

^a TEL TECHNOLOGY CENTER   (United States)

^b TEL   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

300MM WAFERS; ALD SYSTEMS; ANNEALED FILMS; CHEMICAL CHANGES; DEPOSITION SYSTEMS; ELECTROCHEMICAL SOCIETIES; FILM CONFORMALITY; GATE STACKS; IN LINES; IN-SITU; OFFLINE; PROCESS CHARACTERISTICS; RUTHERFORD BACKSCATTERING SPECTROMETRIES; SEMI-CONDUCTORS; TEMPERATURE BOUNDARIES; THERMAL CVD; THERMAL STABILITIES; X-RAY DIFFRACTIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES; XRD SPECTRUMS; ZRO2 THIN FILMS;

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; ELECTRON SPECTROSCOPY; FILM GROWTH; LOGIC GATES; MICROSCOPIC EXAMINATION; ORGANOMETALLICS; OXIDE FILMS; PHOTOELECTRON SPECTROSCOPY; RAPID THERMAL PROCESSING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON; SILICON WAFERS; SPECTROSCOPIC ELLIPSOMETRY; THERMODYNAMIC STABILITY; THICK FILMS; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 55649122268     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2911488     Document Type: Conference Paper

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