Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 30, Issue 1, 2012, Pages

  Swerts, J ^a   Armini, S ^a   Carbonell, L ^a   Delabie, A ^a   Franquet, A ^a   Mertens, S ^a   Popovici, M ^a   Schaekers, M ^a   Witters, T ^a   Tokei Z ^a   Beyer, G ^a   Van Elshocht, S ^a   Gravey, V ^b   Cockburn, A ^b   Shah, K ^c   Aubuchon, J ^c  

^a IMEC   (Belgium)

^b Applied Materials Belgium   (Belgium)

^c APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CONFORMALITY; DEPOSITION PROCESS; GRANULAR STRUCTURESS; GROWTH CHARACTERISTIC; INCUBATION PERIODS; INTERCONNECT APPLICATIONS; METAL NITRIDES; NARROW LINES; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; RU THIN FILMS; RUTHENIUM FILMS; SIDE WALLS; TANTALUM NITRIDES; ULTRA-THIN;

ATOMIC LAYER DEPOSITION; DEPOSITION; METALS; PLASMA DEPOSITION; PLASMAS; RUTHENIUM; SILICON COMPOUNDS; TANTALUM; TANTALUM COMPOUNDS; TITANIUM;

TITANIUM NITRIDE;

EID: 84855608092     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3625566     Document Type: Article

References (20)

1. International Technology Roadmap for Semiconductors (Edition 2009, Interconnect, 2009).
2. T. N. Arunagiri, Y. Zhang, O. Chyan, M. El-Bouanani, M. J. Kim, K. H. Chen, C. T. Wu, and L. C. Chen, Appl. Phys. Lett. 86, 083104 (2005). 10.1063/1.1867560 (Pubitemid 40495298)
3. S.-C. Seo, C.-C. Yang, C.-K. Hu, A. Kerber, S. Fan, D. Horak, D. Canaperi, S. Papa Rao, B. Haran, and B. Boris, Electrochem. Solid-State Lett. 14, 187 (2011). 10.1149/1.3545963
4. O. K. Kwon, S. H. Kwon, H. S. Park, and S. W. Kang, J. Electrochem. Soc. 151, C753 (2004). 10.1149/1.1809576 (Pubitemid 40006144)
5. T. Aaltonen, P. Alen, M. Ritala, and M. Leskala, Chem. Vap. Deposition 9, 45 (2003). 10.1002/cvde.v9:1
6. T. Aaltonen, M. Ritala, K. Arstila, J. Keinonen, and M. Leskala, Chem. Vap. Deposition 10, 215 (2004). 10.1002/cvde.v10:4
7. C. Zhao, M. A. Pawlak, M. Popovici, M. Schaekers, E. Sleeckx, E. Vancoille, D. J. Wouters, Z. Tokei, and J. A. Kittl, ECS Trans. 25, 377 (2009). 10.1149/1.3205072
8. K. Kukli, M. Kernell, E. Puukilainen, J. Aarik, A. Aidla, T. Sajavaara, M. Laitinen, M. Tallarida, J. Sundqvist, M. Ritala, and M. Leskala, J. Electrochem. Soc. 158, 158 (2011). 10.1149/1.3533387
9. H. Li, D. B. Farmer, R. G. Gordon, Y. Lin, and J. Vlassak, J. Electrochem. Soc. 154, D642 (2007). 10.1149/1.2789294 (Pubitemid 350015348)
10. S. S. Yim, M. S Lee, K. S. Kim, and K. B. Kim, Appl. Phys. Lett. 89, 093115 (2006). 10.1063/1.2338793 (Pubitemid 44319988)
11. Y. Y. Wu, A. Kohn, and M. Eizenberg, J. Appl. Phys. 95, 6167 (2004). 10.1063/1.1711176
12. J. Y. Kim, S. Seo, D. Y. Kim, H. Jeon, and Y. Kim, J. Vac. Sci. Technol. A 22, 8 (2004). 10.1116/1.1624285
13. M. Popovici, J. Swerts, K. Tomida, D. Radisic, M.-S. Kim, B. Kaczer, O. Richard, H. Bender, A. Delabie, A. Moussa, C. Vrancken, K. Opsomer, A. Franquet, M. A. Pawlak, M. Schaekers, L. Altimime, S. Van Elshocht, and J. A. Kittl, Phys. Status Solidi (RRL) 5, 19 (2011). 10.1002/pssr.201004462
14. J. M. Camacho and A. I. Oliva, Thin Solid Films, 515, 1881 (2006). 10.1016/j.tsf.2006.07.024 (Pubitemid 44716160)
15. C. H. L. Goodman and M. V. Pessa, J. Appl. Phys. 60, 68 (1986). 10.1063/1.337344
16. M. L. Green, M.-Y. Ho, B. Busch, G. D. Wilk, T. Sorsch, T. Conard, B. Brijs, W. Vandervorst, and P. I. Raisanen, J. Appl. Phys. 92, 7168 (2002). 10.1063/1.1522811
17. S. Armini, S. Demuynck, Z. El-Mekki, J. Swerts, M. Nagar, A. Radisic, N. Heylen, G. Beyer, L. Leunissen, and P. M. Vereecken, ECS Trans. 35, 117 (2011).
18. T. P. Moffat, M. Walker, P. J. Chen, J. E. Bonevich, W. F. Egelhoff, L. Richter, C. Witt, T. Aaltonen, M. Ritala, M. Leskelä, and D. Josell, J.Electrochem. Soc. 153, C37 (2006). 10.1149/1.2131826
19. S. H. Kwon, O. K. Kwon, J. H. Kim, H. R. Oh, K. H. Kim, and S. W. Kang, J. Electrochem. Soc. 155, H296 (2008). 10.1149/1.2868779 (Pubitemid 351502407)
20. L. Carbonell, H. Volders, N. Heylen, K. Kellens, R. Caluwaerts, K. Devriendt, E. A. Sanchez, J. Wouters, V. Gravey, K. Shah, Q. Luo, A. Sundarrajan, J. Lu, J. Aubuchon, P. Ma, M. Narasimhan, A. Cockburn, Z. Tokei, and G. Beyer, Proceedings of the IEEE International Interconnect Technology Conference (IEEE International, 2009), pp. 200-202.