Metallization of sub-30 nm interconnects: Comparison of different liner/seed combinations

Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

Volumn , Issue , 2009, Pages 200-202

  Carbonell, Laureen ^a   Volders, Henny ^a   Heylen, Nancy ^a   Kellens, Kristof ^a   Caluwaerts, Rudy ^a   Devriendt, Katia ^a   Sanchez, Efraín Altamirano ^a   Wouters, Johan ^a   Gravey, Virginie ^b   Shah, Kavita ^c   Luo, Qian ^c   Sundarrajan, Arvind ^c   Lu, Jiang ^c   Aubuchon, Joseph ^c   Ma, Paul ^c   Narasimhan, Murali ^c   Cockburn, Andrew ^b   Tokei, Zsolt ^a   Beyer, Gerald P ^a  

^a IMEC   (Belgium)

^b Applied Materials Belgium   (Belgium)

^c APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL DIMENSION; ELECTRICAL YIELD; GOOD COMPATIBILITY; METALLIZATIONS;

TANTALUM COMPOUNDS;

METALLIZING;

EID: 70349473209     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2009.5090387     Document Type: Conference Paper

References (5)

1. C. Chen et al. J. Electrochem. Soc. vol. 155 (6) p H438 (2008).
2. N. Kumar et al., Semiconductor International vol. 31 (5) p26 (2008).
3. H. Volders et al., AMC 2007.
4. J. Van Olmen et al., IITC 2006.
5. P. Ong et al., ICPT 2008