Thermal stability of copper contact metallization using Ru-containing liner

Electrochemical and Solid-State Letters

Volumn 14, Issue 5, 2011, Pages

  Seo, S C ^a   Yang, C C ^a   Hu, C K ^b   Kerber, A ^c   Fan, S ^a   Horak, D ^a   Canaperi, D ^a   Papa Rao, S ^b   Haran, B ^a   Doris, B ^a  

^a IBM   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

32-NM NODE; 6T-SRAM; BACK END OF THE LINES; COPPER CONTACTS; CU CONTACT; GATE LEAKAGES; STATIC RANDOM ACCESS MEMORY; THERMAL STABILITY; YIELD DEGRADATION;

CHEMICAL VAPOR DEPOSITION; CONTACT RESISTANCE; NANOTECHNOLOGY; THERMODYNAMIC STABILITY; TUNGSTEN;

STATIC RANDOM ACCESS STORAGE;

EID: 79952528739     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3545963     Document Type: Article

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