Direct copper electrochemical deposition on Ru-based substrates for advanced interconnects target 30 nm and 1/2 pitch lines: From coupon to full-wafer experiments

ECS Transactions

Volumn 35, Issue 2, 2011, Pages 117-123

  Armini, S ^a   Demuynck, S ^a   El Mekki, Z ^a   Swerts, J ^a   Nagar, M ^a   Radisic, A ^a   Heylen, N ^a   Beyer, G ^a   Leunissen, L ^a   Vereecken, P M ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; COPPER; INTEGRATED CIRCUIT INTERCONNECTS; PLATING; REDUCTION; SILICON WAFERS; SUBSTRATES;

COPPER ELECTROCHEMICAL DEPOSITIONS; COPPER NUCLEATION; DIRECT PLATING; FRONT PROPAGATION; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; PLATING CHEMISTRY; RESISTIVE SUBSTRATES; SUBSTRATE SURFACE;

ELECTROCHEMICAL DEPOSITION;

EID: 79960767388     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3568853     Document Type: Conference Paper

References (8)

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