Low activation energy for the removal of excess nitrogen in nitrogen rich indium nitride

Applied Physics Letters

Volumn 100, Issue 1, 2012, Pages

  Butcher, Kenneth S A ^a,b   Chen, Patrick P T ^a   Downes, James E ^a  

^a MACQUARIE UNIVERSITY   (Australia)

^b Meaglow Ltd   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT FORMATION ENERGIES; EXCESS NITROGEN; INDIUM NITRIDE; INN FILMS; INTERSTITIAL NITROGEN; LOW GROWTH TEMPERATURE; LOW-ACTIVATION ENERGY; NATIVE DEFECT; NONEQUILIBRIUM PLASMAS; THERMALLY ACTIVATED;

NITRIDES; NITROGEN; NITROGEN REMOVAL;

ACTIVATION ENERGY;

EID: 84855535326     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3673839     Document Type: Article

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