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Volumn 288, Issue 2, 2006, Pages 241-246

Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD

(9) Chen, Patrick P T a Butcher, K Scott A a Wintrebert Fouquet, Marie a Wuhrer, Richard b Phillips, Matthew R b Prince, Kathryn E c Timmers, Heiko d Shrestha, Santosh K d Usher, Brian F e

a MACQUARIE UNIVERSITY (Australia)

b UNIVERSITY OF TECHNOLOGY SYDNEY (Australia)

c AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION (Australia)

d UNIVERSITY OF NEW SOUTH WALES (Australia)

e LA TROBE UNIVERSITY (Australia)

Author keywords

A1. Band gap; A1. Lattice parameters; A1. Stoichiometry; B1. Carbon; B1. Crystallinity; B1. Hydrogen; B1. Indium nitride; B1. Nitrogen excess; B1. Oxygen

Indexed keywords

ABSORPTION SPECTROSCOPY; CRYSTAL IMPURITIES; CRYSTALLIZATION; ENERGY GAP; GLASS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; STOICHIOMETRY; SUBSTRATES;

CRYSTALLINITY; GLASS SUBSTRATES; NITROGEN-EXCESS;

THIN FILMS;

EID: 32644439690 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.12.005 Document Type: Article

Times cited : (23)

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