High-efficiency InGaN-based yellow-green light-emitting diodes

Japanese Journal of Applied Physics

Volumn 49, Issue 2 Part 1, 2010, Pages

  Lai, Mu Jen ^a   Jeng, Ming Jer ^a   Chang, Liann Be ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHIP DIMENSIONS; CRYSTALLINE QUALITY; DRIVING CURRENT; EXTERNAL QUANTUM EFFICIENCY; GREEN LIGHT; GROWTH CONDITIONS; HIGH EFFICIENCY; INGAN/GAN; INTERNAL ELECTRIC FIELDS; LOW POWER; MULTIPLE QUANTUM WELLS; OPTICAL OUTPUT POWER; OUTPUT POWER; P-LAYER; PEAK WAVELENGTH; SUPER-LATTICE STRUCTURES; TEXTURED SURFACE;

ELECTRIC FIELDS; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM EFFICIENCY;

EID: 77950850820     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.021004     Document Type: Article

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