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Volumn 6, Issue SUPPL. 2, 2009, Pages
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Enhanced device performance of GaInN-based deep green light emitting diodes with V-defect-free active region
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVE REGIONS;
DEVICE PERFORMANCE;
DUTY CYCLES;
EXTERNAL QUANTUM EFFICIENCY;
GREEN LEDS;
GREEN LIGHT EMITTING DIODES;
LIGHT OUTPUT POWER;
MULTIPLE QUANTUM WELLS;
PULSE WIDTH;
PULSED OPERATION;
STRESS TEST;
V-DEFECTS;
DEFECT DENSITY;
DEFECTS;
DIES;
EPITAXIAL GROWTH;
LIGHT EMISSION;
SEMICONDUCTOR QUANTUM WELLS;
LIGHT EMITTING DIODES;
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EID: 77949356775
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200880800 Document Type: Article |
Times cited : (17)
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References (9)
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