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Volumn 22, Issue 4, 2012, Pages 1498-1503

A systematic study of atmospheric pressure chemical vapor deposition growth of large-area monolayer graphene

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; COPPER SUBSTRATES; DOMAIN DENSITY; ELECTRICAL TRANSPORT MEASUREMENTS; GRAPHENE LAYERS; HIGH CARRIER MOBILITY; HIGH QUALITY; MEAN SIZE; NUCLEATION AND GROWTH; PARAMETRIC STUDY; POTENTIAL MATERIALS; ROOM TEMPERATURE; SYNTHETIC METHODS; SYNTHETIC PROCESS; SYSTEMATIC STUDY;

EID: 84855385016     PISSN: 09599428     EISSN: 13645501     Source Type: Journal    
DOI: 10.1039/c1jm14272k     Document Type: Article
Times cited : (80)

References (29)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.