Performance enhancement of silicon nanowire memory by tunnel oxynitride, stacked charge trap layer, and mechanical strain

IEEE Electron Device Letters

Volumn 33, Issue 1, 2012, Pages 20-22

  Huang, C J ^a   Yang, C H ^a   Hsueh, C Y ^a   Lee, J H ^a   Chang, Y T ^a   Lee, S C ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Aluminum oxynitride; nonvolatile memory; stacked charge trap layer

Indexed keywords

ALUMINUM OXYNITRIDE; BI-LAYER; CHARGE TRAP; COMPRESSIVE STRAIN; DATA RETENTION; HEAVILY DOPED; MECHANICAL STRAIN; MEMORY DEVICE; MEMORY WINDOW; NON-VOLATILE MEMORIES; OXYNITRIDES; PERFORMANCE ENHANCEMENTS; PROGRAM/ERASE; SILICON NANOWIRES; STACKED CHARGE TRAP LAYER; STRAIN EFFECT; UNDERLYING MECHANISM;

CHARGE TRAPPING; HAFNIUM OXIDES; NANOWIRES; NITRIDES;

TENSILE STRAIN;

EID: 84655167743     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2173789     Document Type: Article

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