Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 232-233

  Wang, Tahui ^a   Chang, Tse En ^a   Chiang, Lu Ping ^a   Huang, Chimoon ^a   Guo, J C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC DISCHARGES; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; HOT CARRIERS; OXIDES; SEMICONDUCTOR DEVICE MODELS; STRESSES;

ELECTRON DETRAPPING; FIELD ENHANCED TUNNELING; HOT HOLE INJECTION; OXIDE TRAP DISCHARGING;

MOSFET DEVICES;

EID: 0029725248     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)