Spatial distribution of oxide traps in stressed flash memory

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 20-23, 2006, Pages

  Shim, Byung Sup ^a   Park, Young June ^a   Min, Hong Shick ^a  

^a Seoul National University   (South Korea)

Author keywords

Flash memory; Oxide trap; Reliability; Retention failure; Spatial distribution; Stress induced leakage current; Trap assisted tunneling

Indexed keywords

ATTENUATION; ELECTRON TUNNELING; LEAKAGE CURRENTS; PROBABILITY DENSITY FUNCTION; RELIABILITY;

OXIDE TRAP; RETENTION FAILURE; SPATIAL DISTRIBUTION; STRESS-INDUCED LEAKAGE CURRENT; TRAP-ASSISTED TUNNELING;

FLASH MEMORY;

EID: 33745322154     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L533     Document Type: Article

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