High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications

IEEE Electron Device Letters

Volumn 26, Issue 10, 2005, Pages 731-733

  Chen, Chi Wen ^a   Chang, Ting Chang ^b   Liu, Po Tsun ^a   Lu, Hau Yan ^a   Wang, Kao Cheng ^b   Huang, Chen Shuo ^c   Ling, Chia Chun ^c   Tseng, Tesung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Hydrogenated amorphous silicon (a Si:H); Light shield; Parasitic resistance; Thin film transistor (TFT)

Indexed keywords

AMORPHOUS SILICON; CARRIER MOBILITY; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; LIGHT EMITTING DIODES; LIQUID CRYSTAL DISPLAYS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DEVICE STRUCTURES;

HYDROGENATED AMORPHOUS SILICON; LIGHT SHIELD; PARASITIC RESISTANCE;

THIN FILM TRANSISTORS;

EID: 27144518079     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.855405     Document Type: Article

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