Tuning of operation mode of ZnO nanowire field effect transistors by solvent-driven surface treatment

Nanotechnology

Volumn 20, Issue 47, 2009, Pages

  Park, Woojin ^a   Hong, Woong Ki ^a   Jo, Gunho ^a   Wang, Gunuk ^a   Choe, Minhyeok ^a   Maeng, Jongsun ^a   Kahng, Yung Ho ^a   Lee, Takhee ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT EMISSION; ELECTRONIC DEVICE; ENHANCEMENT-MODE; ISOPROPYL ALCOHOLS; OPERATION MODE; OPERATION VOLTAGE; POSITIVE SHIFT; SOLVENT TREATMENT; ZNO NANOWIRES;

ELECTRIC WIRE; MESFET DEVICES; NANOWIRES; SEMICONDUCTING ZINC COMPOUNDS; SOLVENTS; SURFACE ROUGHNESS; SURFACE TREATMENT; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

2 PROPANOL; NANOWIRE; SOLVENT; UNCLASSIFIED DRUG; ZINC OXIDE; ZINC OXIDE NANOWIRE;

ARTICLE; DEPLETION; ELECTRIC CURRENT; ELECTRIC POTENTIAL; ELECTRONICS; FIELD EFFECT TRANSISTOR; FIELD EMISSION; IMMERSION; PRIORITY JOURNAL; SURFACE PROPERTY; TUNING CURVE;

EID: 70449776126     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/47/475702     Document Type: Article

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