Highly reliable amorphous silicon gate driver using stable center-offset thin-film transistors

IEEE Transactions on Electron Devices

Volumn 57, Issue 9, 2010, Pages 2330-2334

  Choi, Jae Won ^a   Kim, Jae Ik ^a   Kim, Se Hwan ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

Amorphous materials; integrated circuits; shift registers; thin film transistors (TFTs)

Indexed keywords

A-CENTER; A-SI:H; A-SI:H TFT; GATE DRIVER CIRCUIT; GATE DRIVERS; HYDROGENATED AMORPHOUS SILICON (A-SI:H);

AMORPHOUS FILMS; AMORPHOUS SILICON; INTEGRATED CIRCUITS; SHIFT REGISTERS; THIN FILM CIRCUITS;

THIN FILM TRANSISTORS;

EID: 77956055712     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2054453     Document Type: Article

References (13)

1. V. M. Da Costa and R. A. Martin, "Amorphous silicon shift register for addressing output drivers," IEEE J. Solid-State Circuits, vol.29, no.5, pp. 596-599, May 1994.
2. J.W. Choi, J. H. Oh, S. H. Kim, J. H. Hur, B. S. Bae, and J. Jang, "Stability of dc-dc converter using hydrogenated amorphous thin-film transistors," J. Korean Phys. Soc., vol.48, pp. S98-S101, Jan. 2006.
3. M. Chun, Y. H. Jang, S. Y. Yoon, B. Kim, H. N. Cho, C. D. Kim, and I. J. Chung, "Integrated gate driver using highly stable a-Si TFTs," in Proc. IDW, Dec. 2005, pp. 1077-1079.
4. C. C.Wei,W. C. Lin, S. H. Lo, C. J. Chang, and Y. E.Wu, "Integrated gate driver circuit using a-Si TFT," in Proc. IDW, Dec. 2005, pp. 1023-1025.
5. C. Y. Huang, T. H. Teng, J. W. Tsai, and H. C. Cheng, "The instability mechanisms of hydrogenated amorphous silicon thin film transistors under ac bias stress," Jpn. J. Appl. Phys., vol. 39, no. 7A, pp. 3867-3871, Apr. 2000.
6. M. J. Powell, C. van Berkel, and J. R. Hughes, "Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors," Appl. Phys. Lett., vol.54, no.14, pp. 1323-1325, Jan. 1989.
7. F. R. Libsch and J. Kanicki, "Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors," Appl. Phys. Lett., vol.62, no.11, pp. 1286-1288, Dec. 1993.
8. K. S. Karim, A. Nathan, M. Hack, and W. I. Milne, "Drain-bias dependence of threshold voltage stability of amorphous silicon TFTs," IEEE Electron Device Lett., vol.25, no.4, pp. 188-190, Apr. 2004.
9. H. Gleskova and S. Wagner, "DC-gate-bias stressing of a-Si:H TFTs fabricated at 150 °C on polyimide foil," IEEE Trans. Electron Devices, vol.48, no.8, pp. 1667-1671, Aug. 2001.
10. J. H. Koo, J. W. Choi, Y. S. Kim, M. H. Kang, K. W. Ahn, S. W. Lee, and J. Jang, "Nobel a-Si:H gate driver with high reliability," in Proc. IDW, Dec. 2006, pp. 757-760.
11. J. H. Koo, J. W. Choi, Y. S. Kim, M. H. Kang, S. H. Kim, E. B. Kim, H. Uchike, S.W. Lee, and J. Jang, "Hydrogenated amorphous silicon gate driver made of thin-film transistors," J. Korean Phys. Soc., vol.50, no.4, pp. L933-936, Apr. 2007.
12. J. W. Choi, M. S. Kwon, J. H. Koo, J. H. Park, S. H. Kim, D. H. Oh, S. W. Lee, and J. Jang, "Noble a-Si:H gate driver with high stability," in Proc. SID, May 2008, pp. 1227-1230.
13. SMART SPICE User's Manual Volume1 and 2, SILVACO Inc., Austin, TX, 2004. [Online]. Available: www.silvaco.com