Kinetically limited growth of GaAsBi by molecular-beam epitaxy

Journal of Crystal Growth

Volumn 338, Issue 1, 2012, Pages 107-110

  Ptak, A J ^a   France, R ^a   Beaton, D A ^a   Alberi, K ^a   Simon, J ^a   Mascarenhas, A ^a   Jiang, C S ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

A1. Atomic Force Microscopy; A1. Growth Models; A1. Segregation; A3. Molecular Beam Epitaxy; B1. Bismuth Compounds; B2. Semiconducting III V Materials

Indexed keywords

A1. GROWTH MODELS; ATOMICALLY SMOOTH SURFACE; GROWTH REGIME; HIGH GROWTH RATE; PREDICTION AND CONTROL; ROUGH SURFACES; SEMI CONDUCTING III-V MATERIALS;

BISMUTH COMPOUNDS; DROPS; EPITAXIAL GROWTH; GROWTH RATE; MOLECULAR BEAMS; SURFACES;

BISMUTH;

EID: 84655163228     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.10.040     Document Type: Article

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