Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 170-173

  Preobrazhenskii, V V ^a   Putyato, M A ^a   Pchelyakov, O P ^a   Semyagin, B R ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

BAYARD-ALPERT ION GAUGE; INCORPORATION FACTOR;

MOLECULAR BEAM EPITAXY;

EID: 0032633334     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01308-6     Document Type: Article

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