-
1
-
-
0030129827
-
High-energy charged particles in space at one astronomical unit
-
April
-
J. Feynmen and S. Gabriel, "High-Energy Charged Particles in Space at One Astronomical Unit", IEEE Trans. Nucl. Sci., vol. 43, No. 2, pp. 344, April 1996.
-
(1996)
IEEE Trans. Nucl. Sci.
, vol.43
, Issue.2
, pp. 344
-
-
Feynmen, J.1
Gabriel, S.2
-
2
-
-
0030126407
-
Single-event effects in avionics
-
April
-
E. Normand, "Single-Event Effects in Avionics", IEEE Trans. Nucl. Sci., vol. 43, No. 2, pp. 461, April 1996.
-
(1996)
IEEE Trans. Nucl. Sci.
, vol.43
, Issue.2
, pp. 461
-
-
Normand, E.1
-
3
-
-
1542690244
-
Soft errors in advanced semiconductor devices part I - The three radiation sources
-
Mar.
-
R. Baumann, "Soft errors in advanced semiconductor devices part I - the three radiation sources", IEEE. Trans. Device and Materials Reliability., vol. 1, No. 1, pp. 17, Mar. 2001.
-
(2001)
IEEE. Trans. Device and Materials Reliability
, vol.1
, Issue.1
, pp. 17
-
-
Baumann, R.1
-
4
-
-
0018331014
-
Alpha-particle-induced soft errors in dynamic memories
-
Jan.
-
T. May and M. Woods, "Alpha-particle-induced soft errors in dynamic memories," IEEE Trans. Elec. Dev., vol. 26, No. 1, pp. 2, Jan. 1979.
-
(1979)
IEEE Trans. Elec. Dev.
, vol.26
, Issue.1
, pp. 2
-
-
May, T.1
Woods, M.2
-
5
-
-
0019577364
-
The effect of sea level cosmic rays on electronic devices
-
J. Ziegler and W. Lanford, "The effect of sea level cosmic rays on electronic devices," J. App. Physics, vol. 52, pp. 4305, 1981.
-
(1981)
J. App. Physics
, vol.52
, pp. 4305
-
-
Ziegler, J.1
Lanford, W.2
-
6
-
-
0027812596
-
Single event phenomena in atmospheric neutron environments
-
Dec.
-
C. Gossett, B. Hughlock, M. Katoozi, G. LaRue, and S. Wender, "Single event phenomena in atmospheric neutron environments," IEEE Trans. Nucl. Sci., vol. 40, No. 6, pp. 1845, Dec. 1993.
-
(1993)
IEEE Trans. Nucl. Sci.
, vol.40
, Issue.6
, pp. 1845
-
-
Gossett, C.1
Hughlock, B.2
Katoozi, M.3
Larue, G.4
Wender, S.5
-
7
-
-
0030349739
-
Single event upset at ground level
-
Dec.
-
E. Normand, "Single event upset at ground level," IEEE Trans. Nucl. Sci., vol. 43, No. 6, pp. 2742, Dec. 1996.
-
(1996)
IEEE Trans. Nucl. Sci.
, vol.43
, Issue.6
, pp. 2742
-
-
Normand, E.1
-
8
-
-
0029718244
-
Cosmic ray neutron induced upsets as a major contributor to the soft error rate of current and future generation DRAMs
-
W. McKee, et al., "Cosmic ray neutron induced upsets as a major contributor to the soft error rate of current and future generation DRAMs, " IEEE IRPS, pp. 1, 1996.
-
(1996)
IEEE IRPS
, pp. 1
-
-
McKee, W.1
-
9
-
-
0343461064
-
Single event upset of VLSI memory circuits induced by thermal neutrons
-
T. Oldham, S. Murrill, and C. Self, "Single Event Upset of VLSI Memory Circuits Induced by Thermal Neutrons," Rad. Effects, Research, and Engineering., vol. 5, No. 1, pp. 4, 1986.
-
(1986)
Rad. Effects, Research, and Engineering.
, vol.5
, Issue.1
, pp. 4
-
-
Oldham, T.1
Murrill, S.2
Self, C.3
-
10
-
-
0029222559
-
Boron compounds as a dominant source of alpha particles in semiconductor devices
-
R. Baumann, T. Hossain, S. Murata, and H. Kitagawa, "Boron compounds as a dominant source of alpha particles in semiconductor devices," IEEE IRPS, pp. 297, 1995.
-
(1995)
IEEE IRPS
, pp. 297
-
-
Baumann, R.1
Hossain, T.2
Murata, S.3
Kitagawa, H.4
-
11
-
-
0035127652
-
10B fission as a major source of soft errors in high density SRAMs
-
10B fission as a major source of soft errors in high density SRAMs," IEEE IRPS, pp. 211, 2000.
-
(2000)
IEEE IRPS
, pp. 211
-
-
Baumann, R.1
Smith, E.2
-
12
-
-
0035127652
-
10B fission as a major source of soft errors in high density SRAMs
-
10B fission as a major source of soft errors in high density SRAMs," Elsevier Microelectronics Reliability, vol. 41, No. 2, pp. 211, 2001.
-
(2001)
Elsevier Microelectronics Reliability
, vol.41
, Issue.2
, pp. 211
-
-
Baumann, R.1
Smith, E.2
-
13
-
-
8444234179
-
-
hosted by Lawrence Livermore National Labs. and Johnson Matthey Electronics, Feb.
-
"Low-Alpha Lead Symposium", hosted by Lawrence Livermore National Labs. and Johnson Matthey Electronics, Feb. 1997.
-
(1997)
Low-alpha Lead Symposium
-
-
-
14
-
-
0032122796
-
Measurement and analysis of neutron-induced soft errors in sub-half-micron CMOS circuits
-
July
-
Y. Tosaka, et al., "Measurement and analysis of neutron-induced soft errors in sub-half-micron CMOS circuits" IEEE Trans. on Electron Devices, vol. 45, No. 7, pp. 1456, July 1998
-
(1998)
IEEE Trans. on Electron Devices
, vol.45
, Issue.7
, pp. 1456
-
-
Tosaka, Y.1
-
15
-
-
0023867964
-
Application of polyimide resin to semiconductor devices in Japan
-
IEEE, March
-
D. Makino, "Application of polyimide resin to semiconductor devices in Japan", Electrical Insulation Magazine, IEEE, vol. 4, No. 2, pp. 19, March 1988.
-
(1988)
Electrical Insulation Magazine
, vol.4
, Issue.2
, pp. 19
-
-
Makino, D.1
-
16
-
-
0019707564
-
Dynamics of charge collection from alpha-particle tracks in integrated circuits
-
C. Hsieh, P. Murley, and R. O'Brien, "Dynamics of Charge Collection from Alpha-Particle Tracks in Integrated Circuits", IEEE IRPS, pp. 38, 1981.
-
(1981)
IEEE IRPS
, pp. 38
-
-
Hsieh, C.1
Murley, P.2
O'Brien, R.3
-
17
-
-
0035309017
-
Device simulation study of the SEU sensitivity of SRAMs to internal ion tracks generated by nuclear reactions
-
April
-
J. Palau, et al., "Device simulation study of the SEU sensitivity of SRAMs to internal ion tracks generated by nuclear reactions", IEEE Trans. Nucl. Sci., vol. 48, No. 2, pp. 225, April 2001.
-
(2001)
IEEE Trans. Nucl. Sci.
, vol.48
, Issue.2
, pp. 225
-
-
Palau, J.1
-
18
-
-
0033324768
-
Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations
-
Dec.
-
P. Roche, J.M. Palau, G. Bruguier, C. Tavernier, R. Ecoffet, and J. Gasiot, "Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations", IEEE Trans. Nucl. Sci., vol. 46, No. 6, pp. 1355, Dec. 1999
-
(1999)
IEEE Trans. Nucl. Sci.
, vol.46
, Issue.6
, pp. 1355
-
-
Roche, P.1
Palau, J.M.2
Bruguier, G.3
Tavernier, C.4
Ecoffet, R.5
Gasiot, J.6
-
19
-
-
0027259531
-
Soft-error-rate improvement in advanced BiCMOS SRAMs
-
March
-
D. Burnett, C. Lage, and A. Bormann, "Soft-error-rate improvement in advanced BiCMOS SRAMs", IEEE IRPS, pp. 156, March 1993.
-
(1993)
IEEE IRPS
, pp. 156
-
-
Burnett, D.1
Lage, C.2
Bormann, A.3
-
20
-
-
0030129873
-
Single-event effects in SOI technologies and devices
-
O. Musseau, "Single-event effects in SOI technologies and devices" IEEE Trans. Nucl. Sci.,. vol. 43, No. 2, pp. 603-613, 1996.
-
(1996)
IEEE Trans. Nucl. Sci.
, vol.43
, Issue.2
, pp. 603-613
-
-
Musseau, O.1
-
21
-
-
0034789870
-
Impact of CMOS process scaling and SOI on the soft error rates of logic processes
-
S. Hareland, J. Maiz, M. Alavi, K. Mistry, S. Walsta, and Changhong Dai, "Impact of CMOS process scaling and SOI on the soft error rates of logic processes", IEEE VLSI Tech., pp. 73, 2001.
-
(2001)
IEEE VLSI Tech.
, pp. 73
-
-
Hareland, S.1
Maiz, J.2
Alavi, M.3
Mistry, K.4
Walsta, S.5
Dai, C.6
-
22
-
-
0036045605
-
Soft error rate scaling for emerging SOI technology options
-
P. Oldiges, et al., "Soft error rate scaling for emerging SOI technology options", IEEE VLSI Tech., pp. 46, 2002.
-
(2002)
IEEE VLSI Tech.
, pp. 46
-
-
Oldiges, P.1
-
23
-
-
0030130310
-
Cosmic and terrestrial single-event radiation effects in dynamic random access memories
-
April
-
L. Massengill, "Cosmic and terrestrial single-event radiation effects in dynamic random access memories", IEEE Trans. Nucl. Sci., vol. 43, No. 2, pp. 576, April 1996
-
(1996)
IEEE Trans. Nucl. Sci.
, vol.43
, Issue.2
, pp. 576
-
-
Massengill, L.1
-
24
-
-
0035004322
-
Historical trend in alpha-particle induced soft error rates of the Alpha™ microprocessor
-
N. Seifert, D. Moyer, N. Leland, and R. Hokinson, "Historical trend in alpha-particle induced soft error rates of the Alpha™ microprocessor," IEEE IRPS, pp. 259, 2001.
-
(2001)
IEEE IRPS
, pp. 259
-
-
Seifert, N.1
Moyer, D.2
Leland, N.3
Hokinson, R.4
-
25
-
-
0024612096
-
A built-in Hamming code ECC circuit for DRAMs
-
Feb.
-
K. Furutani, K. Arimoto, H. Miyamoto, T. Kobayashi, K. Yasuda, and K. Mashiko, "A built-in Hamming code ECC circuit for DRAMs" IEEE Trans. Solid-State Circ., vol. 24, No. 1, pp. 50, Feb. 1989.
-
(1989)
IEEE Trans. Solid-state Circ.
, vol.24
, Issue.1
, pp. 50
-
-
Furutani, K.1
Arimoto, K.2
Miyamoto, H.3
Kobayashi, T.4
Yasuda, K.5
Mashiko, K.6
-
26
-
-
0034452351
-
Analysis of single-event effects in combinatorial logic - Simulation of the AM2901 bitslice processor
-
Dec.
-
L. Massengill, A. Baranski, D. Van Nort, J. Meng, and B. Bhuva, "Analysis of single-event effects in combinatorial logic - simulation of the AM2901 bitslice processor," IEEE Trans. Nucl. Sci., vol. 47, No. 6, pp. 2609, Dec. 2000.
-
(2000)
IEEE Trans. Nucl. Sci.
, vol.47
, Issue.6
, pp. 2609
-
-
Massengill, L.1
Baranski, A.2
Van Nort, D.3
Meng, J.4
Bhuva, B.5
-
27
-
-
0034451186
-
A digital CMOS design technique for SEU hardening
-
Dec.
-
M. Baze, S. Buchner, and D. McMorrow, "A digital CMOS design technique for SEU hardening," IEEE Trans. Nucl. Sci., vol. 47, No. 6, pp. 2603, Dec. 2000.
-
(2000)
IEEE Trans. Nucl. Sci.
, vol.47
, Issue.6
, pp. 2603
-
-
Baze, M.1
Buchner, S.2
McMorrow, D.3
-
28
-
-
0036082034
-
Soft error rate mitigation techniques for modern microcircuits
-
D. Mavis and P. Eaton, "Soft error rate mitigation techniques for modern microcircuits", IEEE ERPS, pp. 216, 2002.
-
(2002)
IEEE ERPS
, pp. 216
-
-
Mavis, D.1
Eaton, P.2
|