The effects of space radiation exposure on power MOSFETS: A review

International Journal of High Speed Electronics and Systems

Volumn 14, Issue 2, 2004, Pages 445-463

  Shenai, K ^a   Galloway, K F ^b   Schrimpf, R D ^b  

^a University of Illinois at Chicago   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

MOSFETS; Power MOSFETS; Radiation effects; Space radiation; VDMOS

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON TRANSITIONS; FIELD EFFECT TRANSISTORS; MOS CAPACITORS; RADIATION EFFECTS;

ELECTRONIC SYSTEM; POWER MOSFET; SPACE RADIATION; VERTICAL DOUBLE-DIFFUSED (VDMOS) TECHNOLOGY;

MOSFET DEVICES;

EID: 8444237096     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156404002454     Document Type: Review

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