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Volumn 14, Issue 12, 2011, Pages

Effective Schottky barrier height modulation by an ultrathin passivation layer of GeO xN y for Aln-Ge(100) contact

(7) Jiang, Yu Long a Xie, Qi b Qu, Xin Ping a Ru, Guo Ping a Zhang, David W a Deduytsche, Davy b Detavernier, Christophe b

a FUDAN UNIVERSITY (China)

b GHENT UNIVERSITY (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

PASSIVATION LAYER; PLASMA PRE-TREATMENT; PLASMA TREATMENT; SCHOTTKY BARRIER HEIGHT MODULATION; SCHOTTKY BARRIER HEIGHTS; ULTRA-THIN;

GERMANIUM; PASSIVATION; PLASMA DEPOSITION; SCHOTTKY BARRIER DIODES;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 84255183027 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/2.004112esl Document Type: Article

Times cited : (8)

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