Influence of ZnO buffer layer deposition parameters on the structure and properties of Gadoped ZnO thin films

Glass Technology: European Journal of Glass Science and Technology Part A

Volumn 52, Issue 2, 2011, Pages 43-49

  Chu, C Y ^a   Hsu, C Y ^b   Hong, J H ^b   Chou, C P ^a   Chen, C W ^b,c   Sung, T L ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b LUNGHWA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CRYSTALLINITIES; DIFFRACTION PEAKS; FILM QUALITY; GA-DOPED ZNO; GLASS SUBSTRATES; GRAIN SIZE; HEXAGONAL WURTZITE STRUCTURE; HIGH TRANSMITTANCE; LOW RESISTIVITY; PREFERRED ORIENTATIONS; RADIO FREQUENCY MAGNETRON SPUTTERING; RF POWER; SPUTTERING PRESSURES; STRUCTURE AND PROPERTIES; TRANSPARENT CONDUCTIVE FILMS; VISIBLE RANGE; XRD; ZNO; ZNO BUFFER LAYER;

BUFFER LAYERS; DEPOSITION; GALLIUM; GALLIUM ALLOYS; MAGNETRON SPUTTERING; OPTICAL WAVEGUIDES; OXIDE FILMS; SUBSTRATES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE; ZINC SULFIDE;

CONDUCTIVE FILMS;

EID: 83655202984     PISSN: 00171050     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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