Thermal conductivity of aluminium nitride thin films prepared by reactive magnetron sputtering

Journal of Physics D: Applied Physics

Volumn 45, Issue 1, 2012, Pages

  Duquenne, C ^a   Besland, M P ^a   Tessier, P Y ^a   Gautron, E ^a   Scudeller, Y ^a   Averty, D ^b  

^a UNIVERSITÉ DE NANTES   (France)

^b UNIVERSITY OF NANTES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALN FILMS; AMORPHOUS LAYER; ARGON PLASMAS; BULK THERMAL CONDUCTIVITY; CRYSTALLINE QUALITY; CRYSTALLINE STRUCTURE; GASPHASE; GRAIN SIZE; GROWTH PROCESS; HIGHLY DENSE; HOT STRIPS; ION ENERGIES; LOW OXYGEN; LOW TEMPERATURES; NITROGEN CONTENT; PURE AL; REACTIVE MAGNETRON SPUTTERING; ROOM TEMPERATURE; SILICON SUBSTRATES; THERMAL BOUNDARY RESISTANCE; UNBALANCED MAGNETRON;

ALUMINUM; ALUMINUM NITRIDE; ARGON; CRYSTALLINE MATERIALS; GRAIN SIZE AND SHAPE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MICROSTRUCTURE; NITRIDES; NITROGEN; NITROGEN PLASMA; OXYGEN; SUBSTRATES;

THERMAL CONDUCTIVITY OF SOLIDS;

EID: 83655202751     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/1/015301     Document Type: Article

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