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Applied Physics Letters

Volumn 93, Issue 5, 2008, Pages

Epitaxial growth of aluminum nitride on AlGaN by reactive sputtering at low temperature

(8) Duquenne, C a Djouadi, M A a Tessier, P Y a Jouan, P Y a Besland, M P a Brylinski, C b Aubry, R c Delage, S c

a UNIVERSITÉ DE NANTES (France)

b UNIVERSITÉ DE LYON (France)

c ALCATEL THALES III V LAB (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; ELECTRON DIFFRACTION; FILM GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; ION BOMBARDMENT; NITRIDES; REACTIVE SPUTTERING; SAPPHIRE; SEMICONDUCTOR ALLOYS; SUBSTRATES; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ALGAN SUBSTRATES; DC MAGNETRON SPUTTERING; OPTIMIZATION OF PROCESS PARAMETERS; SAPPHIRE SUBSTRATES; SELECTED AREA ELECTRON DIFFRACTION; SINGLE-CRYSTALLINE; SUBSTRATE TEMPERATURE; SURFACE MOBILITY;

EPITAXIAL GROWTH;

EID: 51849145028 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2967816 Document Type: Article

Times cited : (25)

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