Barrier layer downscaling of InAlN/GaN HEMTs

65th DRC Device Research Conference

Volumn , Issue , 2007, Pages 109-110

  Medjdoub, F ^b   Carlin, J F ^c   Gonschorek, M ^c   Feltin, E ^c   Py, M A ^c   Knez, M ^d   Troadec, D ^e   Gaquiere C ^e   Chuvilin, A ^b   Kaiser, U ^b   Grandjean, N ^c   Kohn, E ^a,b  

^a IEEE

^b UNIVERSITY OF ULM   (Germany)

^c EPFL   (Switzerland)

^d MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^e INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 43549091221     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2007.4373673     Document Type: Conference Paper

References (2)

1. F. Medjdoub, et al. IEDM Tech. Dig, p. 927, 2006
2. M. Higashiwaki, et al. J. J. Appl. Phys, Vol. 45, No. 32, p. L843, 2006