SCOPUS 정보 검색 플랫폼

Volumn 4, Issue 6, 2011, Pages

Above 600mS/mm Transconductance With 2.3A/mm drain current density AlN/GaN high-electron-mobility transistors grown on silicon

(6) Medjdoub, Farid a Zegaoui, Malek a Waldhoff, Nicolas a Grimbert, Bertrand a Rolland, Nathalie a Rolland, Paul Alain a

a INSTITUT D ELECTRONIQUE (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; CURRENT GAINS; EXTRINSIC TRANSCONDUCTANCE; GATE LENGTH; HIGH PERFORMANCE MILLIMETER WAVE; IN-SITU; MAXIMUM OSCILLATION FREQUENCY; MAXIMUM OUTPUT; SI SUBSTRATES;

CUTOFF FREQUENCY; DRAIN CURRENT; GALLIUM NITRIDE; SILICON NITRIDE; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79958790860 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.4.064106 Document Type: Article

Times cited : (33)

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