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Volumn 99, Issue 22, 2011, Pages

Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices

(9) Srour, H a Salvestrini, J P a,b Ahaitouf, A a,c Gautier, S a,b Moudakir, T a,b Assouar, B b,d Abarkan, M a Hamady, S a,b Ougazzaden, A b

a UNIVERSITÉ DE LORRAINE (France)

b GEORGIA INSTITUTE OF TECHNOLOGY (France)

c SIDI MOHAMED BEN ABDELLAH UNIVERSITY (Morocco)

d INSTITUT JEAN LAMOUR (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; BGAN; CUTOFF WAVELENGTHS; METAL SEMICONDUCTOR METAL; METAL SEMICONDUCTOR METAL PHOTODETECTOR; OPTICAL POWER; SCHOTTKY; SOLAR BLIND; TIME RESPONSE; ULTRA-VIOLET PHOTODETECTORS; WIDE BAND GAP; ZNO;

BORON; BORON COMPOUNDS; GALLIUM NITRIDE; HETEROJUNCTIONS; METALS; PHOTODETECTORS; TUNGSTEN; ZINC OXIDE;

SEMICONDUCTOR SUPERLATTICES;

EID: 82955187863 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3662974 Document Type: Article

Times cited : (42)

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