ZnO-based photodetector with internal photocurrent gain

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 8, 2010, Pages 1972-1977

  Kosyachenko, L A ^a   Lashkarev, G V ^b   Sklyarchuk, V M ^a   Ievtushenko, A I ^b   Sklyarchuk, O F ^a   LazorenkoV I , ^b   Ulyashin, A ^c  

^a CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

^b FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

^c SINTEF MATERIALS AND CHEMISTRY   (Norway)

Author keywords

Gain; II VI semiconductors; Photodetectors; ZnO

Indexed keywords

APPLIED VOLTAGES; COLLECTOR JUNCTIONS; EMITTER JUNCTIONS; GAIN; HETEROSTRUCTURES; HIGH SENSITIVITY; II-VI SEMICONDUCTOR; NI FILMS; PHOTOCURRENT MULTIPLICATION; PHOTORESPONSIVE; RESPONSE TIME; SCHOTTKY CONTACTS; SI SUBSTRATES; ZNO; ZNO SURFACE; ZNO/P-SI;

OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTOR JUNCTIONS; SILICON; VACUUM EVAPORATION; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77957964728     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925443     Document Type: Article

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