MOVPE growth study of BxGa(1-x)N on GaN template substrate

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 233-238

  Gautier, S ^a   Sartel, C ^a   Ould Saad Hamady, S ^b   Maloufi, N ^c   Martin, J ^a   Jomard, F ^d   Ougazzaden, A ^b  

^a CNRS   (France)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (France)

^c UNIVERSITÉ PAUL VERLAINE METZ   (France)

^d LABORATOIRE DES SCIENCES DU CLIMAT ET DE L ENVIRONNEMENT   (France)

Author keywords

A1 HRXD; A3 MOVPE; B2 BGaN

Indexed keywords

AMMONIA; CONCENTRATION (PROCESS); CRYSTAL STRUCTURE; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SECONDARY ION MASS SPECTROMETRY;

BGAN; CRYSTAL LAYERS; HRXD;

BORON COMPOUNDS;

EID: 33845347400     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.09.021     Document Type: Article

References (3)

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3. Mircea A., Ougazzaden A., and Mellet R. Prog. Cryst. Growth Charact. 19 (1989) 39-49