Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes

Journal of Physics D: Applied Physics

Volumn 43, Issue 46, 2010, Pages

  Barkad, H A ^a   Soltani, A ^a   Mattalah, M ^a   Gerbedoen, J C ^a   Rousseau, M ^a   De Jaeger, J C ^a   BenMoussa, A ^b   Mortet, V ^c   Haenen, K ^c,d   Benbakhti, B ^e   Moreau, M ^f   Dupuis, R ^g   Ougazzaden, A ^h  

^a INSTITUT D ELECTRONIQUE   (France)

^b ROYAL OBSERVATORY OF BELGIUM   (Belgium)

^c HASSELT UNIVERSITY   (Belgium)

^d IMEC   (Belgium)

^e UNIVERSITY OF GLASGOW   (United Kingdom)

^f UNIVERSITÉ DES SCIENCES ET TECHNOLOGIES DE LILLE   (France)

^g GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^h GEORGIA INSTITUTE OF TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALN FILMS; CUTOFF WAVELENGTHS; DC BIAS; DEEP UV; DEVICE PERFORMANCE; ENERGY BALANCE MODELS; HIGH QUALITY; MEASUREMENT RESULTS; METAL SEMICONDUCTOR METAL; METALLIZATIONS; MICRO RAMAN SPECTROSCOPY; MODEL PREDICTION; PHYSICAL ANALYSIS; REJECTION RATIOS; RESPONSIVITY; SAPPHIRE SUBSTRATES; SCHOTTKY CONTACTS; SOLAR-BLIND; THREE ORDERS OF MAGNITUDE; X-RAY DIFFRACTION TECHNIQUES;

OPTIMIZATION; PHOTODIODES; RAMAN SPECTROSCOPY; TITANIUM NITRIDE; TOPOLOGY; X RAY DIFFRACTION;

COMPUTER SIMULATION;

EID: 78650155225     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/46/465104     Document Type: Article

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