Atomic-scale determination of band offsets at the Gd2O 3/GaAs (100) hetero-interface using scanning tunneling spectroscopy

Applied Physics Letters

Volumn 99, Issue 21, 2011, Pages

  Chiu, Y P ^a   Huang, B C ^a   Shih, M C ^a   Shen, J Y ^b   Chang, P ^b   Chang, C S ^c   Huang, M L ^b   Tsai, M H ^a   Hong, M ^d   Kwo, J ^b,d  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c INSTITUTE OF PHYSICS   (Taiwan)

^d NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PRECISION; ATOMIC SCALE; BAND ALIGNMENTS; BAND OFFSETS; CRITICAL INFORMATION; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPIES; DIRECT MEASUREMENT; ELECTROSTATIC POTENTIALS; GAAS; HETERO INTERFACES; LOCAL DENSITY OF STATE; SCANNING TUNNELING SPECTROSCOPY; SEMICONDUCTOR TRANSISTORS; SPATIAL VARIATIONS; THEORETICAL MODELING; VALENCE STATE;

GADOLINIUM; GALLIUM ARSENIDE; GATE DIELECTRICS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; SPECTROSCOPY;

VANADIUM;

EID: 81855228018     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3663628     Document Type: Article

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