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Volumn 89, Issue 1, 2012, Pages 76-79

Effect of post metallization annealing on structural and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitors with Pt/HfO 2 gate stack

(4) Jagadeesh Chandra, S V a Kim, Jin Sung a Moon, Kyung Won a Choi, Chel Jong a

a Chonbuk National University (South Korea)

Author keywords

Effective work function; EOT; Fermi level pinning; HfO2; Metal gate; MOS

Indexed keywords

EFFECTIVE WORK FUNCTION; EOT; FERMI LEVEL PINNING; HFO2; METAL GATE; MOS;

ANNEALING; DIELECTRIC DEVICES; ELECTRIC PROPERTIES; FERMI LEVEL; GERMANIUM; HAFNIUM OXIDES; LOGIC GATES; METALLIZING; MOS CAPACITORS; OXYGEN; PLATINUM; WORK FUNCTION;

METAL ANALYSIS;

EID: 81855194454 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2011.03.156 Document Type: Conference Paper

Times cited : (12)

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