Tunable work functions of platinum gate electrode on HfO2 thin films for metal-oxide-semiconductor devices

Applied Physics Letters

Volumn 92, Issue 10, 2008, Pages

  Kim, Yong Mu ^a   Lee, Jang Sik ^a  

^a Kookmin University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRODES; HAFNIUM COMPOUNDS; MOS CAPACITORS; PLATINUM COMPOUNDS; THIN FILMS;

CAPACITANCE-VOLTAGE RESPONSES; EQUIVALENT OXIDE THICKNESS; FLATBAND VOLTAGE VARIATIONS; METAL GATE STACKS;

WORK FUNCTION;

EID: 40849089259     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2892045     Document Type: Article

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