Investigation on the short-circuit capability of 1200V trench gate Field-Stop IGBTs

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2002, Pages 281-284

  Otsuki, Masahito ^a   Onozawa, Y ^a   Kirisawa, M ^a   Kanemaru, H ^a   Yoshihara, K ^a   Seki, Y ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE STRUCTURES; SHORT CIRCUIT CURRENTS;

FIELD-STOP INSULATED GATE BIPOLAR TRANSISTORS (FS-IGBT);

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0036054227     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. The field stop IGBT (FS IGBT) - A new power device concept with a great improvement potential
2. 6.5 kV-modules using IGBTs with field stop technology
3. Ultra thin-wafer technology for a new 600 V-NPT-IGBT
4. rd generation IGBT toward a limitation of IGBT performance
5. 1200 V-trench-IGBT study with square short circuit SOA
6. 1200 V trench gate NPT-IGBT(IEGT) with excellent low on-state voltage
7. A study on the short circuit destruction of IGBTs