Influence of the deposition temperature on the properties of copper thin films prepared by alternating injection of Cu(ethylketoiminate)2 and H2 on a ruthenium substrate

Microelectronic Engineering

Volumn 89, Issue 1, 2012, Pages 27-30

  Park, Kwang Min ^a   Kim, Jae Kyung ^a   Han, Byeol ^a   Lee, Won Jun ^a   Kim, Jinsik ^b   Shin, Hyun Koock ^b  

^a Sejong University   (South Korea)

^b UP Chemical Corp   (South Korea)

Author keywords

Agglomeration; Atomic layer deposition (ALD); Copper (Cu); Seed layer

Indexed keywords

ALTERNATING INJECTION; ATOMIC LAYER DEPOSITION (ALD); CONTINUOUS FILMS; COPPER PRECURSORS; COPPER THIN FILM; DEPOSITION TEMPERATURES; SEED LAYER; SUBSTRATE TEMPERATURE;

AGGLOMERATION; ATOMIC LAYER DEPOSITION; DEPOSITION; RUTHENIUM; SHEET RESISTANCE; SURFACE ROUGHNESS; THIN FILMS; VAPOR DEPOSITION;

COPPER;

EID: 81855163344     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.02.111     Document Type: Conference Paper

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