Atomic layer deposition of copper thin film using Cu II(diketoiminate)2 and H2

Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

Volumn , Issue , 2009, Pages 173-174

  Han, Byeol ^a   Parka, Kwang Min ^a   Park, Kwangchol ^b   Park, Jung Woo ^c   Lee, Won Jun ^a  

^a Sejong University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c UP Chemical Corp   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS FILMS; COPPER THIN FILM; CU FILMS; DEPOSITED FILMS; DEPOSITION TEMPERATURES;

ATOMIC LAYER DEPOSITION; DEPOSITION; ELECTRIC RESISTANCE; METALLIC FILMS; PLATINUM;

COPPER;

EID: 70349446742     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2009.5090379     Document Type: Conference Paper

References (7)

1. M. Juppo, et al., J. Vac. Sci. Technol. A 15, 2330 (1997).
2. P. Martensson, et al, J. Electrochem Soc. 145, 2926 (1998).
3. R. Solanki, AVS Topical Conference on Atomic Layer Deposition 2001 (San Jose, CA, August 2001)
4. Z. Li, et al., Inor. Chem. 44, 1728 (2005).
5. K.-H. Park, et al., Inorg. Chem. 45, 8480 (2006)
6. K.-H. Park, et al., J. Am. Chem. Soc. 127, 9330 (2005).
7. S. Rossnagel, et al., J. Vac. Sci. Technol. B 22, 240(2004).