Effect of annealing on the properties of indium-tin-oxynitride films as ohmic contacts for GaN-based optoelectronic devices

ACS Applied Materials and Interfaces

Volumn 1, Issue 7, 2009, Pages 1451-1456

  Himmerlich, Marcel ^a,b   Koufaki, Maria ^c,e   Ecke, Gernot ^a   Mauder, Christof ^a   Cimalla, Volker ^a,d   Schaefer, Juergen A ^a   Kondilis, Antonis ^e   Pelekanos, Nikos T ^c,e   Modreanu, Mircea ^f   Krischok, Stefan ^a   Aperathitis, Elias ^e  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b FRAUNHOFER INSTITUTE FOR MANUFACTURING TECHNOLOGY AND ADVANCED MATERIALS IFAM   (Germany)

^c UNIVERSITY OF CRETE   (Greece)

^d FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^e INSTITUTE OF COMPUTER SCIENCE   (Greece)

^f UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

oxides; oxynitrides; photoelectron spectroscopy; semiconductors; sputtering

Indexed keywords

ARGON PLASMAS; CONTACT BEHAVIOR; CORE-LEVEL ELECTRONS; ELECTRICAL PROPERTY; HIGH-TEMPERATURE ANNEALING; ITO FILMS; OPTICAL TRANSMITTANCE; OXYNITRIDE FILMS; OXYNITRIDES; P-TYPE GAN; POST DEPOSITION ANNEALING; RF-SPUTTERING; SEMICONDUCTORS; SURFACE CHARACTERIZATION; UNBOUND STATE;

ANNEALING; CARRIER CONCENTRATION; ELECTRIC CONTACTORS; ELECTRONS; GALLIUM NITRIDE; INDIUM; NITROGEN; NITROGEN PLASMA; OHMIC CONTACTS; OPTOELECTRONIC DEVICES; OXIDE FILMS; OXYGEN; OXYGEN VACANCIES; PHOTOELECTRICITY; PHOTONS; TIN;

PHOTOELECTRON SPECTROSCOPY;

EID: 81755176248     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am900138f     Document Type: Article

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