Highly transparent and low-resistant ZnNi/indium tin oxide Ohmic contact on p-type GaN

Applied Physics Letters

Volumn 90, Issue 18, 2007, Pages

  Chae, S W ^c   Kim, K C ^a   Kim, D H ^a   Kim, T G ^a   Yoon, S K ^b   Oh, B W ^b   Kim, D S ^b   Kim, H K ^b   Sung, Y M ^a  

^a Korea University   (South Korea)

^b Samsung Electro Mechanics   (South Korea)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONTACT RESISTANCE; GALLIUM NITRIDE; INDIUM COMPOUNDS; OHMIC CONTACTS; ZINC COMPOUNDS;

INDIUM TIN OXIDE (ITO); LOW RESISTANCE; TRANSMITTANCE;

LIGHT EMITTING DIODES;

EID: 34247862381     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2731672     Document Type: Article

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