-
1
-
-
0036507205
-
Extending the road beyond CMOS
-
Feb
-
J. A. Hutchby, G. I. Bourianoff, V. V. Zhirnov, and J. E. Brewer, " Extending the road beyond CMOS," IEEE Circuits Devices Mag., vol. 18, pp. 28-41, Feb. 2002.
-
(2002)
IEEE Circuits Devices Mag.
, vol.18
, pp. 28-41
-
-
Hutchby, J.A.1
Bourianoff, G.I.2
Zhirnov, V.V.3
Brewer, J.E.4
-
2
-
-
0033307465
-
Si complementary single-electron inverter
-
Y. Ono et al., "Si complementary single-electron inverter," in IEDM Tech. Dig., 1999, pp. 367-370.
-
(1999)
IEDM Tech. Dig.
, pp. 367-370
-
-
Ono, Y.1
-
3
-
-
0036228417
-
Programmable single-electron transistor logic for low-power intelligent Si LSI
-
K. Uchida, J. Koga, R. Ohba, and A. Toriumi, "Programmable single-electron transistor logic for low-power intelligent Si LSI," in Proc. ISSCC, vol. 2, 2002, pp. 162-453.
-
(2002)
Proc. ISSCC
, vol.2
, pp. 162-453
-
-
Uchida, K.1
Koga, J.2
Ohba, R.3
Toriumi, A.4
-
4
-
-
0036057138
-
Few electron devices: Toward hybrid CMOS-SET integrated circuits
-
A. M. Ionescu, M. Declercq, S. Mahapatra, K. Banerjee, and J. Gautier, "Few electron devices: Toward hybrid CMOS-SET integrated circuits," in Proc. DAC, 2002, pp. 88-93.
-
(2002)
Proc. DAC
, pp. 88-93
-
-
Ionescu, A.M.1
Declercq, M.2
Mahapatra, S.3
Banerjee, K.4
Gautier, J.5
-
5
-
-
0036923558
-
Modeling and analysis of power dissipation in single electron logic
-
S. Mahapatra, A. M. Ionescu, K. Banerjee, and M. J. Declerq, " Modeling and analysis of power dissipation in single electron logic," in IEDM Tech. Dig., 2002, pp. 323-326.
-
(2002)
IEDM Tech. Dig.
, pp. 323-326
-
-
Mahapatra, S.1
Ionescu, A.M.2
Banerjee, K.3
Declerq, M.J.4
-
6
-
-
0035718150
-
A multiple-valued logic with merged single-electron and MOS transistors
-
H. Inokawa, A. Fujiwara, and Y. Takahashi, "A multiple-valued logic with merged single-electron and MOS transistors," in IEDM Tech. Dig., 2001, pp. 147-150.
-
(2001)
IEDM Tech. Dig.
, pp. 147-150
-
-
Inokawa, H.1
Fujiwara, A.2
Takahashi, Y.3
-
7
-
-
17644439135
-
SETMOS: A novel true hybrid SET- CMOS high current Coulomb blockade oscillation cell for future nano-scale analog ICs
-
S. Mahapatra et al., "SETMOS: A novel true hybrid SET- CMOS high current Coulomb blockade oscillation cell for future nano-scale analog ICs," in IEDM Tech. Dig., 2003, pp. 703-706.
-
(2003)
IEDM Tech. Dig.
, pp. 703-706
-
-
Mahapatra, S.1
-
9
-
-
0006825518
-
Coulomb blockade memory using integrated single-electron transistor /metal-oxide semiconductor transistor grain cells
-
Dec
-
Z. A. K. Durrani, A. C. Irvine, and H. Ahmed, "Coulomb blockade memory using integrated single-electron transistor/metal-oxide semiconductor transistor grain cells," IEEE Trans. Electron Devices, vol. 47, pp. 2334-2339, Dec. 2000.
-
(2000)
IEEE Trans. Electron Devices
, vol.47
, pp. 2334-2339
-
-
Durrani, Z.A.K.1
Irvine, A.C.2
Ahmed, H.3
-
11
-
-
0029516774
-
A new logic family based on single-electron transistors
-
R. H. Chen, A. N. Korotkov, and K. K. Likharev, "A new logic family based on single-electron transistors," in Proc. Device Res. Conf., 1995, pp. 44-45.
-
(1995)
Proc. Device Res. Conf.
, pp. 44-45
-
-
Chen, R.H.1
Korotkov, A.N.2
Likharev, K.K.3
-
14
-
-
8144220925
-
Accurate modeling of quantum-dot based multi-tunnel junction memory
-
C. Le Royer, G. Le Carval, D. Fraboulet, and M. Sanquer, "Accurate modeling of quantum-dot based multi-tunnel junction memory," in Proc. ESSDERC, 2002, pp. 403-406.
-
(2002)
Proc. ESSDERC
, pp. 403-406
-
-
Le Royer, C.1
Le Carval, G.2
Fraboulet, D.3
Sanquer, M.4
-
15
-
-
0033169529
-
Macromodeling of single electron transistors for efficient circuit simulation
-
Aug
-
Y. S. Yu, S. W. Hwang, and D. Ahn, "Macromodeling of single electron transistors for efficient circuit simulation," IEEE Trans. Electron Devices, vol. 46, pp. 1667-1671, Aug. 1999.
-
(1999)
IEEE Trans. Electron Devices
, vol.46
, pp. 1667-1671
-
-
Yu, Y.S.1
Hwang, S.W.2
Ahn, D.3
-
16
-
-
2142662232
-
A novel elementary SET negative differential resistance device
-
S. Mahapatra and A. M. Ionescu, "A novel elementary SET negative differential resistance device," Jpn. J. Appl. Phys., pt. 1, vol. 43, no. 2, pp. 538-539, 2004.
-
(2004)
Jpn. J. Appl. Phys.
, vol.43
, Issue.2 PART 1
, pp. 538-539
-
-
Mahapatra, S.1
Ionescu, A.M.2
-
17
-
-
0033715104
-
Analytical single-electron transistor (SET) model for design and analysis of realistic SET circuits
-
B
-
K. Uchida, K. Matsuzawa, J. Koga, R. Ohba, S. Takagi, and A. Toriumi, "Analytical single-electron transistor (SET) model for design and analysis of realistic SET circuits," Jpn. J. Appl. Phys., pt. 1, vol. 39, no. 4B, pp. 2321-2324, 2000.
-
(2000)
Jpn. J. Appl. Phys.
, vol.39
, Issue.4 PART 1
, pp. 2321-2324
-
-
Uchida, K.1
Matsuzawa, K.2
Koga, J.3
Ohba, R.4
Takagi, S.5
Toriumi, A.6
-
18
-
-
0036609870
-
A quasianalytical SET model for few electron circuit simulation
-
June
-
S. Mahapatra, A. M. Ionescu, and K. Banerjee, "A quasianalytical SET model for few electron circuit simulation," IEEE Electron Device Lett., vol. 23, pp. 366-368, June 2002.
-
(2002)
IEEE Electron Device Lett.
, vol.23
, pp. 366-368
-
-
Mahapatra, S.1
Ionescu, A.M.2
Banerjee, K.3
-
19
-
-
0038394706
-
A compact analytical model for asymmetric single-electron transistors
-
Feb
-
H. Inokawa and Y. Takahashi, "A compact analytical model for asymmetric single-electron transistors," IEEE Trans. Electron Devices, vol. 50, pp. 455-461, Feb. 2003.
-
(2003)
IEEE Trans. Electron Devices
, vol.50
, pp. 455-461
-
-
Inokawa, H.1
Takahashi, Y.2
-
20
-
-
0348220484
-
Simulating hybrid circuits of single-electron transistors and field-effect transistors
-
G. Lientschnig, I. Weymann, and P. Hadley, "Simulating hybrid circuits of single-electron transistors and field-effect transistors," Jpn. J. Appl. Phys., pt. 1, vol. 42, no. 10, pp. 6467-6472, 2003.
-
(2003)
Jpn. J. Appl. Phys.
, vol.42
, Issue.10 PART 1
, pp. 6467-6472
-
-
Lientschnig, G.1
Weymann, I.2
Hadley, P.3
-
22
-
-
0346778737
-
A CAD framework for co-design and analysis of CMOS-SET hybrid integrated circuits
-
S. Mahapatra et al., "A CAD framework for co-design and analysis of CMOS-SET hybrid integrated circuits," in Proc. ICCAD, 2003, pp. 497-502.
-
(2003)
Proc. ICCAD
, pp. 497-502
-
-
Mahapatra, S.1
-
23
-
-
0842285942
-
-
SILVACO Inc.. [Online]. Available
-
SMARTSPICE User Manual. SILVACO Inc.. [Online]. Available: www.silvaco.com
-
SMARTSPICE User Manual
-
-
-
24
-
-
0037395540
-
Inversion charge liberalization in MOSFET modeling and rigorous derivation of the EKV compact model
-
J. Sallese, M. Bucher, F. Krummenacher, and P. Fazan, "Inversion charge liberalization in MOSFET modeling and rigorous derivation of the EKV compact model," Solid State Electron., vol. 47, pp. 677-683, 2003.
-
(2003)
Solid State Electron.
, vol.47
, pp. 677-683
-
-
Sallese, J.1
Bucher, M.2
Krummenacher, F.3
Fazan, P.4
-
25
-
-
8144221476
-
New paradigm of predictive MOSFET and interconnect modeling for early circuit design
-
Y. Cao et al., New paradigm of predictive MOSFET and interconnect modeling for early circuit design. presented at Proc. CICC. [Online]. Available: www-device.eecs.berkeley.edu/~ptm
-
Proc. CICC
-
-
Cao, Y.1
-
26
-
-
0007836179
-
Negative differential resistance due to single-electron switching
-
C. P. Heij, D. C. Dixon, P. Hadley, and J. E. Mooij, "Negative differential resistance due to single-electron switching," Appl. Phys. Lett., vol. 74, no. 7, pp. 1042-1044, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, Issue.7
, pp. 1042-1044
-
-
Heij, C.P.1
Dixon, D.C.2
Hadley, P.3
Mooij, J.E.4
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