Fracture properties of hydrogenated amorphous silicon carbide thin films

Acta Materialia

Volumn 60, Issue 2, 2012, Pages 682-691

  Matsuda, Y ^a   King, S W ^b   Bielefeld, J ^b   Xu, J ^b   Dauskardt, R H ^a  

^a STANFORD UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

Dielectrics; Fracture; Moisture assisted cracking; Plasticity; Thin films

Indexed keywords

A-SIC:H; COHESIVE FRACTURE; ENERGY DEPENDENCE; FILM DENSITY; FRACTURE MODEL; FRACTURE PROPERTY; LOW SENSITIVITY; LOWER DENSITY; MOIST ENVIRONMENT; MOISTURE-ASSISTED CRACKING; NON-STOICHIOMETRIC COMPOSITION; ORGANIC-INORGANIC; SILICA-BASED HYBRID; STOICHIOMETRIC COMPOSITIONS; SUBOXIDE BONDS;

AMORPHOUS FILMS; BRITTLENESS; DIELECTRIC MATERIALS; FRACTURE; FRACTURE ENERGY; HYDROGENATION; MOISTURE; NANOINDENTATION; PLASTICITY; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON CARBIDE; THIN FILMS;

AMORPHOUS SILICON;

EID: 81355147136     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2011.10.014     Document Type: Article

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