Effect of annealing treatment on structural, electrical, and optical properties of Ga-doped ZnO thin films deposited by RF magnetron sputtering

Thin Solid Films

Volumn 520, Issue 2, 2011, Pages 703-707

  Wu, F ^a   Fang, L ^a   Pan, Y J ^a   Zhou, K ^a   Ruan, H B ^a   Liu, G B ^a   Kong, C Y ^b  

^a CHONGQING UNIVERSITY   (China)

^b CHONGQING NORMAL UNIVERSITY   (China)

Author keywords

Annealing; Ga doped; Magnetron sputtering; Optical properties; ZnO thin films

Indexed keywords

ANNEALED FILMS; ANNEALING TREATMENTS; BLUE EMISSION; DEEP LEVEL EMISSION; GA-DOPED; GA-DOPED ZNO; NEAR BAND EDGE EMISSIONS; NEAR-IR; PHOTOLUMINESCENCE SPECTRUM; POLYCRYSTALLINE; RF-MAGNETRON SPUTTERING; ZNO THIN FILM;

ANNEALING; ELECTRIC PROPERTIES; GALLIUM; MAGNETRON SPUTTERING; METALLIC FILMS; OPTICAL FILMS; PHOTOLUMINESCENCE; THIN FILMS; ZINC OXIDE;

OPTICAL PROPERTIES;

EID: 80755190031     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.04.147     Document Type: Conference Paper

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