Effects of H 2 ambient annealing in fully 0 0 2-textured ZnO:Ga thin films grown on glass substrates using RF magnetron co-sputter deposition

Applied Surface Science

Volumn 255, Issue 8, 2009, Pages 4616-4622

  Kim, Sungyeon ^a   Seo, Jungmok ^a   Jang, Hyeon Woo ^b   Bang, Jungsik ^b   Lee, Woong ^c   Lee, Taeyoon ^a   Myoung, Jae Min ^a  

^a Yonsei University   (South Korea)

^b LG Chemical Ltd   (South Korea)

^c Changwon National University   (South Korea)

Author keywords

Doping (A1); Gallium compounds (B1); Physical vapor deposition processes (A3); Semiconducting materials (B2); X ray diffraction (A1); Zinc compounds (B1)

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CONDUCTIVE FILMS; ENERGY GAP; GALLIUM COMPOUNDS; GLASS; II-VI SEMICONDUCTORS; MAGNETRONS; OPTICAL PROPERTIES; OXIDE FILMS; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES; TRANSPARENT ELECTRODES; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION; ZINC OXIDE;

AS-DEPOSITED STATE; ELECTRICAL AND OPTICAL PROPERTIES; GALLIUM DOPED ZINC OXIDES; ORDERS OF MAGNITUDE; PHYSICAL VAPOR DEPOSITION PROCESS; RF-MAGNETRON CO-SPUTTERING; SEMICONDUCTING MATERIALS; TRANSPARENT CONDUCTIVE OXIDE FILMS;

THIN FILMS;

EID: 58749092293     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.11.085     Document Type: Article

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