Effect of hydrogen dilution on the metastability of hydrogenated amorphous silicon oxide solar cells

Japanese Journal of Applied Physics

Volumn 50, Issue 11 PART 1, 2011, Pages

  Inthisang, Sorapong ^a   Krajangsang, Taweewat ^a   Sichanugrist, Porponth ^a   Watahiki, Tatsuro ^a   Miyajima, Shinsuke ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; DEVICE STABILITY; EFFECT OF HYDROGEN; HYDROGENATED AMORPHOUS SILICON (A-SI:H); LIGHT SOAKING; METASTABILITIES; SINGLE JUNCTION SOLAR CELLS; TEMPERATURE DEPENDENCE; VERY HIGH FREQUENCY; VHF-PECVD;

AMORPHOUS FILMS; CARBON DIOXIDE; CARBON FILMS; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; HYDROGEN; HYDROGENATION; NANOSTRUCTURED MATERIALS; OPEN CIRCUIT VOLTAGE; OXIDE FILMS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON COMPOUNDS; SILICON OXIDES; SOLAR POWER GENERATION; TEMPERATURE DISTRIBUTION;

AMORPHOUS SILICON;

EID: 80755143252     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.111401     Document Type: Article

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