메뉴 건너뛰기




Volumn 210, Issue 2-3, 1997, Pages 148-154

Wide optical-gap a-SiO:H films prepared by rf glow discharge

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ENERGY GAP; FERMI LEVEL; GLOW DISCHARGES; HYDROGENATION; OPTICAL PROPERTIES; PLASMA APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031097779     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(96)00597-2     Document Type: Article
Times cited : (58)

References (34)
  • 26
    • 0000768503 scopus 로고
    • Electronic Transport in Hydrogenated Amorphous Semiconductor
    • Springer, Berlin
    • H. Overhof and P. Thomas, Electronic Transport in Hydrogenated Amorphous Semiconductor, Tracts in Modern Physics, Vol. 114 (Springer, Berlin, 1989).
    • (1989) Tracts in Modern Physics , vol.114
    • Overhof, H.1    Thomas, P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.