Optimization of amorphous silicon oxide buffer layer for high-efficiency p-type hydrogenated microcrystalline silicon oxide/n-type crystalline silicon heterojunction solar cells

Japanese Journal of Applied Physics

Volumn 47, Issue 11, 2008, Pages 8452-8455

  Sritharathikhun, Jaran ^a   Yamamoto, Hiroshi ^a   Miyajima, Shinsuke ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Buffer layer; Heterojunction solar cells; Hydrogenated silicon oxide films; Surface passivation

Indexed keywords

AMORPHOUS FILMS; BUFFER LAYERS; CRYSTALLINE MATERIALS; HETEROJUNCTIONS; HYDROGENATION; MICROCRYSTALLINE SILICON; NONMETALS; OXIDE FILMS; OXIDES; OXYGEN; PASSIVATION; PHOTOVOLTAIC CELLS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SILICA; SILICON; SILICON COMPOUNDS; SILICON OXIDES; SOLAR CELLS; SOLAR EQUIPMENT;

BUFFER LAYER; CELL PERFORMANCES; CHEMICAL VAPORS; CZOCHRALSKI (CZ); HETERO JUNCTION; HETEROJUNCTION SOLAR CELLS; HYDROGENATED SILICON OXIDE FILMS; OXYGEN CONCENTRATIONS; SHORT WAVELENGTH (SW); SUBSTRATE TEMPERATURE (ST); SURFACE PASSIVATION; VHF-PECVD;

AMORPHOUS SILICON;

EID: 58749096533     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.8452     Document Type: Article

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