Electrical properties of epitaxial 0.65Pb (Mg1/3Nb 2/3)O3-0.35PbTiO3 Thin films grown on buffered si substrates by pulsed laser deposition

International Journal of Applied Ceramic Technology

Volumn 8, Issue 6, 2011, Pages 1393-1399

  Jiang, Juan ^a   Hur, Sung Gi ^a   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; COERCIVE FIELD; DISSIPATION FACTORS; EPITAXIALLY GROWN; HIGH DIELECTRIC CONSTANTS; HIGH RESOLUTION X RAY DIFFRACTION; HYSTERESIS CHARACTERISTICS; OXYGEN AMBIENT; PEROVSKITE STRUCTURES; PMN-PT FILM; RMS ROUGHNESS; SI (001) SUBSTRATE; SI SUBSTRATES; SUBSTRATE TEMPERATURE;

COBALT COMPOUNDS; DEPOSITION; ELECTRIC FIELDS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LEAD; PEROVSKITE; POLARIZATION; PULSED LASER DEPOSITION; PULSED LASERS; SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; X RAY DIFFRACTION;

SUBSTRATES;

EID: 80755127089     PISSN: 1546542X     EISSN: 17447402     Source Type: Journal    
DOI: 10.1111/j.1744-7402.2010.02605.x     Document Type: Article

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