Crystal orientation anisotropy of epitaxial Pb(Mg1/3Nb 2/3)O3-PbTiO3 thick films grown by MOCVD

Integrated Ferroelectrics

Volumn 80, Issue 1, 2006, Pages 67-76

  Yokoyama, Shintaro ^a   Okamoto, Satoshi ^a   Okamoto, Shoji ^a   Iijima, Takashi ^b   Saito, Keisuke ^c   Okino, Hirotake ^d   Yamamoto, Takashi ^d   Funakubo, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c BRUKER AXS INC   (United States)

^d NATIONAL DEFENSE ACADEMY   (Japan)

Author keywords

Composition; Epitaxial; MOCVD; Orientation; PMN PT

Indexed keywords

ANISOTROPY; COMPOSITION; CRYSTAL ORIENTATION; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SUBSTRATES; THIN FILMS;

CRYSTAL ANISOTROPY; FIELD-INDUCED STRAIN; ORIENTATION; PMN-PT FILMS;

LEAD COMPOUNDS;

EID: 33745755363     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580600656312     Document Type: Article

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