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Journal of Applied Physics

Volumn 107, Issue 11, 2010, Pages

Bias stress instability in organic transistors investigated by ac admittance measurements

(6) Di Girolamo, F V a Barra, M a Capello, V a Oronzio, M a Romano, C a Cassinese, A a

a UNIVERSITY OF NAPLES FEDERICO II (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ADMITTANCE MEASUREMENTS; BIAS STRESS; CHANNEL RESISTANCE; CHARGE ACCUMULATION; CONDUCTING PROPERTIES; CONTACT REGIONS; EXPERIMENTAL APPROACHES; EXPERIMENTAL PROCEDURE; FUNCTION OF FREQUENCY; MODEL FITTING; ORGANIC TRANSISTOR; QUANTITATIVE ANALYSIS; TIME BEHAVIOR; TRANSMISSION LINE;

BLIND SOURCE SEPARATION; CAPACITANCE; FIELD EFFECT TRANSISTORS; REACTION KINETICS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 77953642846 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3425795 Document Type: Article

Times cited : (12)

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