The instability mechanisms of hydrogenated amorphous silicon thin film transistors under AC bias stress

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 A, 2000, Pages 3867-3871

  Huang, Chun Yao ^a   Teng, Teh Hung ^a   Tsai, Jun Wei ^b   Cheng, Huang Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Unipac Optoelectronics Corporation   (Taiwan)

Author keywords

A Si:H TFT; AC; Charge compensation; Charge trapping; Duty ratio; RC effect; State creation

Indexed keywords

AMORPHOUS SILICON; DEGRADATION; ELECTRODES; HYDROGENATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; STABILITY; STRESS ANALYSIS; THRESHOLD VOLTAGE;

AC BIAS STRESS; CHARGE COMPENSATION; CHARGE TRAPPING; HYDROGENATED AMORPHOUS SILICON THIN FILM TRANSISTORS; STATE CREATION;

THIN FILM TRANSISTORS;

EID: 0034215744     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.3867     Document Type: Article

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